Publication

Peer-Reviewed Publication

1. Wu, Yen Hsueh, Hong Hyuk Kim, and Jae Cheol Shin. "Improved mobility in InAs nanowire FETs with sulfur-based surface treatment." Current Applied Physics 70 (2025): 81-86 (SCIE Journal, I.F.= 2.4, Corresponding Author)

2. Aviraj M. Teli, Sonali A. Beknalkar, Vinayak V. Satale, Jae Hyeop Lee, Min Su Kim, Jae Cheol Shin, Hong Hyuk Kim, "Transformative impact of molybdenum on nickel phosphate hydrate electrodes towards superior energy storage application." Ceramics International 50.21 (2024) (SCIE Journal, I.F.= 5.1, Corresponding Author)

3. Aviraj M. Teli, Sonali A. Beknalkar, Vinayak V. Satale, Manesh A. Yewale, Rutuja U. Amate, Pritam J. Morankar, Jae Cheol Shin, Hong Hyuk Kim,, “Innovations in metal telluride composite materials towards enhancing supercapacitor energy storage” Journal of Alloys and Compounds, 1005, 15, (2024) (SCIE Journal, I.F.= 5.8, Corresponding Author)

4. Honghyuk Kim, Shining Xu, Cheng Liu, Kaddour Lekhal, Thomas Kuech, and Luke Mawst, “MOCVD-Grown In0. 22Ga0.78As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density." Crystal Growth & Design, 24, 9, 3707–3713 (2024). (SCIE Journal, I.F.= 3.8, First & Corresponding Author)

5. H. K. Yang, G. H. Oh, T.J. Jeong, T.W. Kim, S. Kim, H. Kim, J.C. Shin, “Synergistic Performance of MoS2/In0.53Ga0.47As Staggered Heterojunction for Broadband Optoelectronics” physica status solidi (b), 2300343, (2024) (Accepted), (SCIE Journal, I.F.= 1.6, Corresponding Author)

6. S. Xu, S. Zhang, J. D. Kirch, S. Suri, N. Pokharel, H. Gao, H. Kim, P. Dhingra, M. L. Lee, D. Botez, and  L. J. Mawst, “∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition” Applied Physics Letters 121. 171103 (2022), (SCIE Journal, I.F.= 3.971, Co-author)

7. (Invited) L. J. Mawst, H. Kim, W. Wei, T. F. Kuech, and P. Gopalan, “Selectively-Grown Quantum Dot Active Region Lasers” IEEE Journal of Quantum Electronics 58. 4 (2022), , (SCIE Journal, I.F.= 2.52, Co-author)

8. J. Lee, H. Kim, L. Gautam, and M Razeghi. "High thermal stability of κ-Ga2O3 grown by MOCVD." Crystals 11.4 (2021): 446, (SCIE Journal, I.F.= 2.670, Co-author)

9. J. Lee, H. Kim, L. Gautam, and M Razeghi. "Highly Conductive Co-Doped Ga2O3: Si-In Grown by MOCVD." Coatings 11, no. 3 (2021), (SCIE Journal, I.F.= 3.236, Co-author)

10. J. Lee, H. Kim, L. Gautam, K. He, X. Hu, V. P. Dravid, and M. Razeghi. "Study of Phase Transition in MOCVD Grown Ga2O3 from κ to β Phase by Ex Situ and In Situ Annealing."  Photonics, 8(1), 17 (2021), (SCIE Journal, I.F.= 2.536, Co-author)

11. L. Mawst, H. Kim, G. Smith, W. Sun, and N. Tansu, "Strained-Layer Quantum Well Materials Grown by MOCVD for Diode Laser Application.", Progress in Quantum Electronics (2020): 100303, (SCIE Journal, I.F.= 10.333, Co-author)

12. W. Sun*, H. Kim*, L. Mawst, N. Tansu, "Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness", Journal of Crystal Growth 531 (2020): 125381. (* These authors contributed equally to this work.), (SCIE Journal, I.F.= 1.830, First author)

13. H. Kim, B. Shi, Z. Lingley, Q. Li, A. Rajeev, M. Brodie, K. M. Lau, T. F. Kuech, Y. Sin, L. J. Mawst. “Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE”, Optics Express 27.23 (2019): 33205-33216, , (SCIE Journal, I.F.= 3.833, First author)

14. H. Kim, W. Wei, T. F. Kuech, P. Gopalan, L. J. Mawst. “Impact of InGaAs carrier collection quantum well on the performance of InAs QD active region lasers fabricated by diblock copolymer lithography and selective area epitaxy”, Semiconductor Science and Technology 34.2 (2019): 025012, (SCIE Journal, I.F.= 2.048, First author)

15. A. Rajeev, B. Shi, Qiang Li, J. D. Kirch, M. Cheng, A. Tan, H. Kim, K. Oresick, C. Sigler, K. M. Lau, T. F. Kuech, L. J. Mawst. “III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers”, physica status solidi (a) 216.1. (2019): 1800493, (SCIE Journal, I.F.= 2.170, Co-author)

16. H. Kim, Y. Guan, T. F. Kuech, L. J. Mawst. “Impact of Thermal Annealing on Internal Device Parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 Quantum Well Lasers”, IET Optoelectonics, 13.1 (2018): 12-16, (SCIE Journal, I.F.= 1.691, First author)

17. H. Kim, K. Kim, Y. Guan, J. Lee, T. F. Kuech, L. J. Mawst. “Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy”, Applied Physics Letters, 112, (2018) 251105, (SCIE Journal, I.F.= 3.971, First author)

18. D. Botez, J. D. Kirch, C. Boyle, K. M. Oresick, C. Sigler, H. Kim, B. B. Knipfer, J. H. Ryu, D. Lindberg, T. Earles, L. J. Mawst, Y. V. Flores, “High-efficiency, high-power mid-infrared quantum cascade lasers”, Optical Materials Express, 8, 5, (2018): 1378, (SCIE Journal, I.F.= 3.074, Co-author)

19. A. Pateras, J. Park, Y. Ahn, J. A. Tilka, M. V. Holt, H. Kim, L. J. Mawst, and P. G. Evans, “Dynamical scattering in coherent hard x-ray nanobeam Bragg diffraction”, PHYSICAL REVIEW B, 97, (2018) 235414, (SCIE Journal, I.F.= 3.908, Co-author)

20. H. Kim, Y. Guan, S. E. Babcock, T. F. Kuech, L. J. Mawst, “Characteristics of OMVPE grown GaAsBi QW lasers and Impact of Post-Growth Thermal Annealing”, Journal of Applied Physics, 123, (2018) 113102, (SCIE Journal, I.F.= 2.877, First author)

21. A. W. Wood, W. Chen, H. Kim, Y. Guan, K. Forghani, A. Anand, T.F. Kuech, L. J. Mawst, S. E. Babcock, “Annealing-Induced Precipitate Formation Behavior in MOVPE-grown GaAs1-xBix Explored by Atom Probe Tomography and HAADF-STEM”, Nanotechnology, 28 (2017) 215704, (SCIE Journal, I.F.= 3.971, Co-author)

22. H. Kim, Y. Guan, K. Forghani, T. F. Kuech, L. J. Mawst, “Laser Diodes Employing GaAs1-xBix/GaAs1-yPy Quantum Well Active Regions”, Semiconductor Science and Technology 32 (2017): 07500, (SCIE Journal, I.F.= 2.048, First author)

23. H. Kim, J. Choi, Z. Lingley, M. Brodie, Y. Sin, T. F. Kuech, P. Gopalan, L. J. Mawst, “Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning”, Journal of Crystal Growth, 465, (2017) 48–54, (SCIE Journal, I.F.= 1.830, First author)

24. J. Kirch, H. Kim, C. Boyle, C. C Chang, L. Mawst, D. Lindberg III, T. Earles, D. Botez, M. Helm, J. von Borany, S. Akhmadaliev, R. Böttger, C. J. Reyner, “Proton Implantation for Electrical Insulation of the InGaAs/InAlAs Superlattice Material Used in 8-15 μm-Emitting Quantum Cascade Lasers”, Applied Physics Letter. 110, 082102 (2017), (SCIE Journal, I.F.= 3.971, Co-author)

25. Y. Guan, K. Forghani, H. Kim, S. E. Babcock, L. J. Mawst, and T. F. Kuech, “Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs Substrates”, Journal of Crystal Growth, 464, (2017) 39–48, (SCIE Journal, I.F.= 1.830, Co-author)

26. T. W. Kim, A. W. Wood, H. Kim, Y. Kim, J. J. Lee, M. Peterson, Y. Sin, S.C. Moss, T. F. Kuech, S. E. Babcock, and L. J. Mawst, “Impact of Sb incorporation on MOVPE-grown bulk InGaAs(Sb)N films for solar cell application”, IEEE Journal of Photovoltaics 6.6 (2016): 1673-1677, (SCIE Journal, I.F.= 4.401, co-author)

27. H. Kim, Y. Guan, K. Forghani, K. Kim, Y. Kim, J.J. Lee, T.F. Kuech, A. Wood, S. E. Babcock, and L. J. Mawst, “Impact of in-situ Annealing on Dilute Bismide Materials and its application to Photovoltaic Applications”, Journal of Crystal Growth 452 (2016): 276-280, (SCIE Journal, I.F.= 1.830, First author)

28. H. Kim, K. Forghani., Y. Guan, G. Luo, A. Anand, D. Morgan, T. F. Kuech, L. J. Mawst, Z. R. Lingley, B. J. Foran, Y. Sin, “Strain-Compensated GaAsP/GaAsBi/GaAsP Quantum Wells for Laser application”, Semiconductor Science and Technology 30.9 (2015): 094011, , (SCIE Journal, I.F.= 2.048, First author)

International Conference Proceedings

1. S. Xu, S. Zhang, J. Kirch, S. Suri, N. Pokharel, H. Kim, D. Botez, L. Mawst “∼8.5μm  InP-based quantum cascade lasers grown on GaAs by MOCVD” 28th International Semiconductor Laser Conference, Shimane Prefectural Convention Center, Matsue, Japan, Oct 16-19, 2022

2. S. Xu, H. Kim, B. Kniperm J. Kirch, D. Botez, L. Mawst “InGaAs/AlInAs/InP Quantum Cascade Laser grown on GaAs with strained QW-based dislocation filters”, 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22) and 20th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-20), Virtual Conference, Aug 2 – 4, 2021

3. (Invited) L. Mawst, A. Rajeev, H. Kim, J. Kirch, K. Oresick, B. Knipfer, S. Xu, D. Botez, B. Shi, Q. Li, K. M. Lau, T. F. Kuech “Quantum Cascade Laser Active Regions Grown on Lattice-mismatched substrates by OMVPE”, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), Keystone Resort, Keystone, Colorado, USA, Jul 28 – Aug 2, 2019

4. K. Lekhal, A. Rajeev, S. Xu, H. Kim, O. Elleuch, T. Kuech, L. J. Mawst, “High Growth Rate InxGa1-xAs metamorphic buffer layers by OMVPE”, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), Keystone Resort, Keystone, Colorado, USA, Jul 28 – Aug 2, 2019

5. (Invited) H. Kim, W. Wei, P. Gopalan, T. F. Kuech, L. J. Mawst, “In0.8Ga0.2As QD active region (λ~1.65μm) laser diodes grown by block copolymer lithography and selective area OMVPE”, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), Keystone Resort, Keystone, Colorado, USA, Jul 28 – Aug 2, 2019

6. H. Kim, B. Shi, Z. Lingley, Q. Li, A. Rajeev, M. Brodie, K. M. Lau, T. F. Kuech, Y. Sin, L. J. Mawst, “Electrically Injected 1.64μm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE”, Compound Semiconductor Week 2019 (CSW2019), Nara Kasugano International Forum, Nara, Japan, May 19 – 23, 2019

7. (Invited) L. J. Mawst, C. Sigler, J. D. Kirch, C. Boyle, K. Oresick, H. Kim, D. F. Lindberg III, T. L. Earles, D. Botez, “High-Power MOCVD-Grown Quantum Cascade Laser”, IEEE Photonics Conference (IPC), Reston, VA, USA, Sept 30 – Oct 4, 2018

8. H. Kim, W. Wei, P. Gopalan, T. F. Kuech, L. J. Mawst, “Quantum Dot Laser Diodes emitting 1.57~1.67μm at room temperature grown by Block Copolymer Lithography and Selective Area MOCVD”, 26th International Semiconductor Laser Conference, Hilton Santa Fe Historic Plaza, Santa Fe, New Mexico, USA, Sept 16-19, 2018

9. B. Knipfer, C. Sigler, C. Boyle, J. D. Kirch, K. Oresick, H. Kim, D. Botez, L. J. Mawst, N. Becher, M. Farzaneh, D. F. Lindberg III, T. Earles, “Failure Analysis of High-Power (One-Watt) Room-Temperature Continuous Wave MOCVD Quantum Cascade Lasers”, 26th International Semiconductor Laser Conference, Hilton Santa Fe Historic Plaza, Santa Fe, New Mexico, USA, Sept 16-19, 2018

10. H. Kim, W. Wei, T. F. Kuech, P. Gopalan and L. J. Mawst, “Room temperature Lasing from Selective Area MOVPE of InAs Quantum Dots on GaAs fabricated by block-copolymer lithography”, 19th International Conference on Metal Organic Vapor Phase Epitaxy, Nara Kasugano International Forum, Nara, Japan, June 3-8, 2018

11. W. Sun, H. Kim, L. J. Mawst, and N. Tansu, “Strain relaxation and compensation in InGaAs quantum wells at near critical thickness”, 19th International Conference on Metal Organic Vapor Phase Epitaxy, Nara Kasugano International Forum, Nara, Japan, June 3-8, 2018

12. M. Dwyer, H. Kim, L. Mawst, D. van der Weide, “Double-uniform Schottky diode nonlinear transmission line generating sub-picosecond transients”, IEEE Radio and Wireless Symposium (RWS), Anaheim, CA, Jan 14-17, 2018

13. H. Kim, W. Wei, T. F. Kuech, P. Gopalan and L. J. Mawst, “Room Temperature Operation of InAs Quantum Dot lasers Formed by Diblock-Copolymer Lithography and Selective Area MOCVD”, IEEE Photonics Conference (IPC), Orlando, FL, USA, Oct 1-5, 2017

14. H. Kim, L. J. Mawst, Y. Guan, S.E. Babcock T. F. Kuech “Characteristics of Ga(AsP)/Ga(AsBi)/Ga(AsP) Quantum Well Active Region Lasers Grown by MOVPE” 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21) and 18th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18), Santa Fe, NM, USA, July 30- August 4, 2017.

15. L. J. Mawst, H. Kim, Y. Guan, S.E. Babcock T. F. Kuech “Characteristics of Ga(AsP) / Ga(AsBi) / Ga(AsP) Quantum Well Active Region Lasers Grown by MOVPE” 8th International Workshop on Bi-containing Semiconductors: Growth, Properties, and Devices, Marburg, Germany, July 23-26, 2017

16. (Invited) D. Botez, J. D. Kirch, C.C. Chang, C. Boyle, H. Kim, K. M. Oresick, C. Sigler, L. J Mawst, M. Jo, J. C.  Shin, D. G. Kim, D. F. Lindberg III, T. L. Earles, “High internal differential efficiency midinfrared quantum cascade lasers”, SPIE Photonic West Opto, San Francisco, CA, USA, Jan 28 – Fab 2, 2017

17. H. Kim, Y. Guan, K. Forghani, T. F. Kuech and L. J. Mawst, “Strain-Compensated Ga(AsP)/Ga(AsBi)/Ga(AsP) Quantum Well Active Region Lasers” SPIE Photonic West Opto, San Francisco, CA, USA, Jan 28 – Fab 2, 2017

18. H. Kim, J. Choi, T. F. Kuech, P. Gopalan and L. J. Mawst, “Selective MOCVD growth of strained (In) GaAs quantum dot active region laser diode on GaAs substrates employing diblock copolymer lithograph”, IEEE Photonics Conference (IPC), Waikoloa, HI, USA, Oct 2-6, 2016

19. (Invited) L. J. Mawst, H. Kim, Y. Guan, K. Forghani, and T. F. Kuech, “Ga(AsBi)/Ga(AsP) Quantum Well Lasers Grown by MOCVD”, IEEE Photonics Conference (IPC), Waikoloa, HI, USA, Oct 2-6, 2016

20. H. Kim, Y. Guan, K. Forghani, T. F. Kuech and L. J. Mawst, “Strain-Compensated Ga(AsP)/Ga(AsBi)/Ga(AsP) Quantum Well Active Region Lasers” 7th International Workshop on Bi-containing Semiconductors: Growth, Properties, and Devices, Shanghai, People’s Republic of China, July 24-27, 2016

21. H. Kim, A. Wood, W. Chen, Y. Guan, K. Forghani, T. F. Kuech, S. E. Babcock and L. J. Mawst, “Atom Probe Tomography and Transmission Electron Microscope Analysis of Bi Precipitate within annealed Ga(AsBi) alloy” 7th International Workshop on Bi-containing Semiconductors: Growth, Properties, and Devices, Shanghai, People’s Republic of China, July 24-27, 2016

22. M. H. Jo, H. Kim, J. Choi, H. Kim, J. Hwang, D. G. Kim, P. Gopalan, J. C. Shin and L. J Mawst, “Selective-Area MOVPE Growth of the Ternary III-V Nanowires Employing PS/PMMA Diblock Copolymer Nanopatterning”, 18th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, CA, USA, July 10-15, 2016

23. H. Kim, J. Choi, Z. R. Lingley, M. Brodie, Y Sin, T. F. Kuech, P. Gopalan and L. J. Mawst, “Selective Growth of Strained (In)GaAs Quantum Dots on GaAs Substrates Employing Diblock Copolymer Lithography Nanopatterning”, 18th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, CA, USA, July 10-15, 2016

24. Y. Guan, H. Kim, S. E. Babcock, L. J. Mawst and T. F. Kuech, “Surface Step-Dependent Incorporation for GaAs1-xBix during Metal Organic Vapor Phase Epitaxy”, 18th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, CA, USA, July 10-15, 2016

25. W. Chen, A. Wood, H. Kim, K. Forghani, Y. Guan, L. J. Mawst, T. F. Kuech and S. E. Babcock, “Atom Probe Tomography Study of Bi Precipitation during Annealing of Metastable GaAs1-xBix Solid Solution” 18th International Conference on Metal Organic Vapor Phase Epitaxy, San Diego, CA, USA, July 10-15, 2016

26. M. R. Laskar, D. H. K. Jackson, K. Forghani, H. Kim, and T. F. Kuech, “Epitaxial Growth of Two-dimensional Layered Semiconductors” 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electron Material Symposium, Big Sky, MT, USA, August 2-7, 2015.

27. H. Kim, K. Forghani, Y. Guan, Y. Kim, K. Kim, J. Lee, T. F. Kuech, and L. J. Mawst, “Impact of in-situ Annealing on Dilute Bismide Materials and its Application to Solar Cell” 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electron Material Symposium, Big Sky, MT, USA, August 2-7, 2015.

28. H. Kim, K. Forghani, Y. Guan, Y. Kim, K. Kim, J. Lee, T. F. Kuech, and L. J. Mawst, “Impact of in-situ Annealing on Dilute Bismide Materials and its Application to Optoelectronic Devices” 6th International Workshop on Bismuth-Containing Semiconductor, Madison, WI, USA, July 19-22, 2015.

29. Y. Sin, Z. Lingley, M. Peterson, M. Brodie, S. C. Moss, T. W. Kim, H. Kim, Y. Guan, K. Forghani, and L. J. Mawst, “Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure” SPIE OPTO. International Society for Optics and Phtonics, 2015

30. L. J. Mawst, K. Forghani, Y. Guan, A. Anand1, H. Kim, T. Kim, A. Wood, S. Babcock, T. F. Kuech, Z. R. Lingley, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, and S. C. Moss “Strain-Compensated GaAsP/GaAsBi(P)/GaAsP Quantum Wells for Laser Applications“, 5th International Workshop on Bismuth-Containing Semiconductor, Cork, Ireland, July 20-23, 2014